TY - JOUR
T1 - Yellow luminescence and related deep levels in unintentionally doped gan films
AU - Shalish, I.
AU - Kronik, L.
AU - Segal, G.
AU - Rosenwaks, Y.
AU - Shapira, Yoram
PY - 1999
Y1 - 1999
N2 - The deep level energy distribution associated with the well-known “yellow luminescence” in GaN is studied by means of two complementary deep level techniques: photoluminescence and surface photovoltage spectroscopy. The combined experimental results show that the yellow luminescence is due to capture of conduction band electrons, or electrons from shallow donors (with a maximum depth on the order of the thermal energy) by a deep acceptor level with a broad energy distribution, centered at ∼2.2 eV below the conduction band edge. In addition, the results show that the density of yellow luminescence related states possesses a significant surface component.
AB - The deep level energy distribution associated with the well-known “yellow luminescence” in GaN is studied by means of two complementary deep level techniques: photoluminescence and surface photovoltage spectroscopy. The combined experimental results show that the yellow luminescence is due to capture of conduction band electrons, or electrons from shallow donors (with a maximum depth on the order of the thermal energy) by a deep acceptor level with a broad energy distribution, centered at ∼2.2 eV below the conduction band edge. In addition, the results show that the density of yellow luminescence related states possesses a significant surface component.
UR - http://www.scopus.com/inward/record.url?scp=0001257733&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.59.9748
DO - 10.1103/PhysRevB.59.9748
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AN - SCOPUS:0001257733
SN - 1098-0121
VL - 59
SP - 9748
EP - 9751
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 15
ER -