W-Band CMOS on-chip energy harvester and rectenna

Nir Weissman, Samuel Jameson, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


This paper presents the first fully on-chip integrated energy harvester and rectenna at the W-Band in 65nm CMOS technology. The designs are based on a 1-stage Dickson voltage multiplier. The rectenna consists of an on-chip integrated dipole antenna with a reflector underneath the substrate to enhance the directivity and realized gain. The energy harvester and rectenna achieve a power conversion efficiency of 10% and 2% respectively at 94GHz. The stand-alone harvester occupies only 0.0945mm2 including pads, while the fully integrated rectenna occupies a minimal chip area of 0.48mm2.

Original languageEnglish
Title of host publication2014 IEEE MTT-S International Microwave Symposium, IMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479938698
StatePublished - 2014
Event2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States
Duration: 1 Jun 20146 Jun 2014

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X


Conference2014 IEEE MTT-S International Microwave Symposium, IMS 2014
Country/TerritoryUnited States
CityTampa, FL


  • CMOS
  • W-band
  • energy harvesting
  • mm-wave integrated circuits
  • rectifier
  • wireless power receiver


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