Vertical junction Si photovoltaic cells for concentrating PV

Roni Pozner*, Gideon Segev, Rona Sarfaty, Abraham Kribus, Yossi Rosenwaks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


High concentration PV systems usually prefer tandem III-V cells to Si cells, due to the much lower conversion efficiency of the latter. We re-examine the efficiency achievable with Si Vertical Multi-Junction (VMJ) cells consisting of series-connected vertical p-n junctions within a single cell. A comprehensive 2D numerical analysis of a Si vertical junction has been performed, over a wide range of design parameters and concentration levels. The results show outstanding performance potential under high concentration of 1,000 suns and higher, with efficiencies above 29% under realistic (non-ideal) assumptions. This compares to reported efficiencies of about 20% for both real cells and previous simulations using realistic assumptions. This difference may be attributed to two effects: a better representation of the active layer photoconductivity, which lowers drastically the cell's series resistance under high concentration; and optimization of the junction dimensions without restriction due to the accepted fabrication process.

Original languageEnglish
Title of host publication6th International Conference on Concentrating Photovoltaic Systems, CPV-6
Number of pages4
StatePublished - 2010
Event6th International Conference on Concentrating Photovoltaic, ICPV-6 - Freiburg, Germany
Duration: 7 Apr 20109 Apr 2010

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference6th International Conference on Concentrating Photovoltaic, ICPV-6


  • Concentrator photovoltaics
  • Edge-illuminated cell
  • Silicon cell
  • Vertical multi-junction cell


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