Variable temperature probing of minority carrier transport and optical properties in p -Ga2O3

Sushrut Modak, Leonid Chernyak*, Alfons Schulte, Corinne Sartel, Vincent Sallet, Yves Dumont, Ekaterine Chikoidze, Xinyi Xia, Fan Ren, Stephen J. Pearton, Arie Ruzin, Denis M. Zhigunov, Sergey S. Kosolobov, Vladimir P. Drachev

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa-VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa-VO++ defect complexes.

Original languageEnglish
Article number031106
JournalAPL Materials
Issue number3
StatePublished - 1 Mar 2022


FundersFunder number
NSF DMR1856662
US–Israel BSF2018010
National Science FoundationECCS1802208, ECCS2127916
U.S. Department of Defense
Defense Threat Reduction AgencyHDTRA1-20-2-0002
North Atlantic Treaty OrganizationG5748
University of Central Florida


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