Abstract
The technology to control the interface charge density between CdTe substrates and CdTe epilayers grown by metalorganic chemical vapor deposition is studied. The interface charge is determined by the modified built-in potential derived from capacitance-voltage characteristics of Schottky contacts formed on the epilayers. Novel ultraviolet (UV) photon assisted and photo thermal surface pretreatments that control the interface between p-type CdTe substrates and CdTe epilayers are reported. The substrates are exposed to UV radiation provided by a high pressure Hg lamp operating at 600 W with a wide emission spectrum between 190 and 300 nm. The UV photon assisted surface pretreatment with hydrogen is compared with additional surface pretreatments: thermal pretreatment with hydrogen (without UV photons) and UV photo thermal pretreatment with hydrogen. The UV photon assisted and the UV photo thermal surface pretreatments with hydrogen reduce the interface charge density to a practically negligible value. In addition, the p-type doping level of the substrate is reduced considerably in a layer of few microns adjacent to the interface.
| Original language | English |
|---|---|
| Pages (from-to) | 977-983 |
| Number of pages | 7 |
| Journal | Journal of Electronic Materials |
| Volume | 22 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 1993 |
| Externally published | Yes |
Keywords
- CdTe substrates
- MOCVD
- UV-assisted surface cleaning
- epitaxial CdTe
- interface charges