Unified retention model for localized charge trapping nonvolatile memory device

Asia Shapira*, Yael Shur, Yosi Shacham-Diamand, Assaf Shappir, Boaz Eitan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Retention after cycling in an NROM nonvolatile memory cell is investigated. Electrical characterizations combined with two-dimensional simulations were employed. By combining subthreshold current characterizations with gate-induced drain leakage measurements, the retention loss mechanisms are quantified and differentiated. A unified retention model for the NROM technology is proposed, incorporating both lateral charge transport in the nitride layer and hot carrier-induced interface-states formation. The fabrication conditions in the various studies reported in the literature and the resultant impact on interface-states formation are most likely the cause of the formally nonresolved debate regarding the origin of retention loss in NROM technology.

Original languageEnglish
Article number133514
JournalApplied Physics Letters
Volume92
Issue number13
DOIs
StatePublished - 2008

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