Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

V. Mikhelashvili*, B. Meyler, Y. Shneider, S. Yofis, J. Salzman, G. Atiya, T. Cohen-Hyams, G. Ankonina, W. D. Kaplan, M. Lisiansky, Y. Roizin, G. Eisenstein

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

An optically triggered nonvolatile memory based on platinum nano-particles embedded within a SiO2 and HfO2 dielectric stack on a silicon on insulator (SOI) substrate is presented. The memory cell exhibits a very wide spectral response, from 220 nm to 950 nm; much wider than common photo-detectors fabricated on SOI. It offers several functionalities including a low programming voltage and wide hysteresis of the capacitance-voltage characteristics, an illumination and voltage sweep amplitude dependent hysteresis of the current-voltage characteristics, and plasmonic enhanced, efficient broad-band photo detection.

Original languageEnglish
Article number074503
JournalJournal of Applied Physics
Volume113
Issue number7
DOIs
StatePublished - 21 Feb 2013
Externally publishedYes

Funding

FundersFunder number
Israeli Nanotechnology Focal Technology Area

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