Ultrahigh vacuum study of indium oxide GaAs(110) interfaces

A. Golan*, Yoram Shapira, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Indium oxide/n-GaAs(110) interfaces fabricated by means of reactive evaporation of indium in the presence of oxygen onto ultrahigh vacuum cleaved GaAs(110) have been studied by means of Auger electron spectroscopy and electron energy loss spectroscopy. The results show that the growth of the indium oxide layers at room temperature under a wide range of oxygen pressures followed the Stransky-Krastanov model. In all cases the presence of In clusters at the interface was observed, and at the high-pressure regime (∼ 1 × 10 -4 Torr) some oxidation of the GaAs surface was noted as well. These results can be correlated to our earlier report [J. Appl. Phys. 69, 1494 (1991)] on the performance of diodes produced under high vacuum conditions.

Original languageEnglish
Pages (from-to)925-930
Number of pages6
JournalJournal of Applied Physics
Issue number3
StatePublished - 1992


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