Ultrafast photoinduced electron transfer across semiconductor-liquid interfaces in the presence of electric fields

Y. Rosenwaks; B. R. Thacker; A. J. Nozik; R. J. Ellingson; K. C. Burr; C. L. Tang

doi:10.1021/j100062a007

Ultrafast photoinduced electron transfer across semiconductor-liquid interfaces in the presence of electric fields

Y. Rosenwaks^*, B. R. Thacker, A. J. Nozik, R. J. Ellingson, K. C. Burr, C. L. Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The rates of photoinduced electron transfer from p-InP to Fe(CN)₆^4-/3- acceptors in aqueous electrolyte have been determined as a function of the initial potential drop (i.e., band bending (V_BO)) in the semiconductor space charge layer using femtosecond luminescence up-conversion techniques. The effects of electric field on electron transfer were separated from the effects of field-enhanced charge separation and surface recombination through a rigorous numerical solution of the coupled continuity and Poisson equations using a Cray supercomputer. A very strong dependence of the electron-transfer velocity (S_et) on V_BO was found, S_et reached a saturation value of 5 × 10⁷ cm/s when the initial value of V_BO in the dark was ≥0.5 eV. When the initial value of V_BO was set near zero, S_et was 9 × 10³ cm/s. Hot electron injection processes appear to play a role in this behavior.

Original language	English
Pages (from-to)	2739-2741
Number of pages	3
Journal	Journal of Physical Chemistry
Volume	98
Issue number	11
DOIs	https://doi.org/10.1021/j100062a007
State	Published - 1994
Externally published	Yes

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title = "Ultrafast photoinduced electron transfer across semiconductor-liquid interfaces in the presence of electric fields",

abstract = "The rates of photoinduced electron transfer from p-InP to Fe(CN)64-/3- acceptors in aqueous electrolyte have been determined as a function of the initial potential drop (i.e., band bending (VBO)) in the semiconductor space charge layer using femtosecond luminescence up-conversion techniques. The effects of electric field on electron transfer were separated from the effects of field-enhanced charge separation and surface recombination through a rigorous numerical solution of the coupled continuity and Poisson equations using a Cray supercomputer. A very strong dependence of the electron-transfer velocity (Set) on VBO was found, Set reached a saturation value of 5 × 107 cm/s when the initial value of VBO in the dark was ≥0.5 eV. When the initial value of VBO was set near zero, Set was 9 × 103 cm/s. Hot electron injection processes appear to play a role in this behavior.",

author = "Y. Rosenwaks and Thacker, {B. R.} and Nozik, {A. J.} and Ellingson, {R. J.} and Burr, {K. C.} and Tang, {C. L.}",

year = "1994",

doi = "10.1021/j100062a007",

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AU - Rosenwaks, Y.

AU - Thacker, B. R.

AU - Nozik, A. J.

AU - Ellingson, R. J.

AU - Burr, K. C.

AU - Tang, C. L.

PY - 1994

Y1 - 1994

N2 - The rates of photoinduced electron transfer from p-InP to Fe(CN)64-/3- acceptors in aqueous electrolyte have been determined as a function of the initial potential drop (i.e., band bending (VBO)) in the semiconductor space charge layer using femtosecond luminescence up-conversion techniques. The effects of electric field on electron transfer were separated from the effects of field-enhanced charge separation and surface recombination through a rigorous numerical solution of the coupled continuity and Poisson equations using a Cray supercomputer. A very strong dependence of the electron-transfer velocity (Set) on VBO was found, Set reached a saturation value of 5 × 107 cm/s when the initial value of VBO in the dark was ≥0.5 eV. When the initial value of VBO was set near zero, Set was 9 × 103 cm/s. Hot electron injection processes appear to play a role in this behavior.

AB - The rates of photoinduced electron transfer from p-InP to Fe(CN)64-/3- acceptors in aqueous electrolyte have been determined as a function of the initial potential drop (i.e., band bending (VBO)) in the semiconductor space charge layer using femtosecond luminescence up-conversion techniques. The effects of electric field on electron transfer were separated from the effects of field-enhanced charge separation and surface recombination through a rigorous numerical solution of the coupled continuity and Poisson equations using a Cray supercomputer. A very strong dependence of the electron-transfer velocity (Set) on VBO was found, Set reached a saturation value of 5 × 107 cm/s when the initial value of VBO in the dark was ≥0.5 eV. When the initial value of VBO was set near zero, Set was 9 × 103 cm/s. Hot electron injection processes appear to play a role in this behavior.

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Ultrafast photoinduced electron transfer across semiconductor-liquid interfaces in the presence of electric fields

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