Ultra-low power consuming direct radiation sensors based on floating gate structures

Evgeny Pikhay*, Yakov Roizin, Yael Nemirovsky

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID) measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions) was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

Original languageEnglish
Article number20
JournalJournal of Low Power Electronics and Applications
Issue number3
StatePublished - 31 Jul 2017
Externally publishedYes


  • CMOS
  • Energetic ions
  • Floating gate
  • Gamma
  • Radiation sensor
  • Semiconductor
  • UV
  • X-ray


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