Two-photon four-wave mixing in III-V semiconductors: Evidence for coherent phonons

I. Gur-Arie*, Shimshon Bar-Ad

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We present midgap femtosecond four-wave mixing measurements on single-crystal GaAs and InP that show a surprising nondegenerate emission, shifted to higher energy relative to the laser, by an amount comparable to the energy of an optical phonon. The polarization dependence of the signal rules out ordinary Raman scattering. We discuss the possibility of impulsive excitation of symmetric lattice vibrations, around localized midgap states that may play a significant role in the two-photon transition amplitude.

Original languageEnglish
Article number125311
Pages (from-to)1253111-1253114
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number12
DOIs
StatePublished - 15 Mar 2002

Fingerprint

Dive into the research topics of 'Two-photon four-wave mixing in III-V semiconductors: Evidence for coherent phonons'. Together they form a unique fingerprint.

Cite this