TWO-DIMENSIONAL SIMULATION OF GLASS REFLOW AND SILICON OXIDATION.

Pantas Sutardja, Yosi Shacham-Diamand, W. G. Oldham

Research output: Contribution to journalConference articlepeer-review

Abstract

A general-purpose program for the two-dimensional simulation of processes with moving boundaries has been written. The program is capable of simulating the growth or deformation of regions for problems with almost any arbitrarily shaped initial geometry. The program's application to the problems of glass reflow and of local oxidation is considered. Aside from predicting final profiles, it can also calculate the stress generated within the media and at the interfaces. The latter capability is particularly important for optimizing oxidation technology while avoiding defects in the silicon substrate caused by high stress level.

Original languageEnglish
Pages (from-to)39-40
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1986
Externally publishedYes

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