Two-dimensional localization in thin copper films

L. Van Den dries; C. Van Haesendonck; Y. Bruynseraede; G. Deutscher

doi:10.1103/PhysRevLett.46.565

Two-dimensional localization in thin copper films

L. Van Den dries^*, C. Van Haesendonck, Y. Bruynseraede, G. Deutscher

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Resistance measurements have been made on low-resistivity thin Cu films (50-500) between 1 and 20 K. A logarithmic temperature dependence of the resistance is observed. For a resistance per square of R<20 Ω/□, good agreement is obtained with the localization theory. The amplitude of the resistance variation and its large magnetic-field dependence exclude possible Coulomb-interaction effects predicted by Altshuler et al. as the main source of the observed behavior.

Original language	English
Pages (from-to)	565-568
Number of pages	4
Journal	Physical Review Letters
Volume	46
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.46.565
State	Published - 1981

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10.1103/PhysRevLett.46.565

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title = "Two-dimensional localization in thin copper films",

abstract = "Resistance measurements have been made on low-resistivity thin Cu films (50-500) between 1 and 20 K. A logarithmic temperature dependence of the resistance is observed. For a resistance per square of R<20 Ω/□, good agreement is obtained with the localization theory. The amplitude of the resistance variation and its large magnetic-field dependence exclude possible Coulomb-interaction effects predicted by Altshuler et al. as the main source of the observed behavior.",

author = "{Van Den dries}, L. and {Van Haesendonck}, C. and Y. Bruynseraede and G. Deutscher",

year = "1981",

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AU - Van Haesendonck, C.

AU - Bruynseraede, Y.

AU - Deutscher, G.

PY - 1981

Y1 - 1981

N2 - Resistance measurements have been made on low-resistivity thin Cu films (50-500) between 1 and 20 K. A logarithmic temperature dependence of the resistance is observed. For a resistance per square of R<20 Ω/□, good agreement is obtained with the localization theory. The amplitude of the resistance variation and its large magnetic-field dependence exclude possible Coulomb-interaction effects predicted by Altshuler et al. as the main source of the observed behavior.

AB - Resistance measurements have been made on low-resistivity thin Cu films (50-500) between 1 and 20 K. A logarithmic temperature dependence of the resistance is observed. For a resistance per square of R<20 Ω/□, good agreement is obtained with the localization theory. The amplitude of the resistance variation and its large magnetic-field dependence exclude possible Coulomb-interaction effects predicted by Altshuler et al. as the main source of the observed behavior.

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Two-dimensional localization in thin copper films

Abstract

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