A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.