Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

Alex Henning; Nandhini Swaminathan; Andrey Godkin; Gil Shalev; Iddo Amit; Yossi Rosenwaks

doi:10.1007/s12274-015-0730-1

Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

Alex Henning, Nandhini Swaminathan, Andrey Godkin, Gil Shalev, Iddo Amit, Yossi Rosenwaks^*

^*Corresponding author for this work

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

We report on an electrostatically formed nanowire (EFN)-based sensor with tunable diameters in the range of 16 nm to 46 nm and demonstrate an EFNbased field-effect transistor as a highly sensitive and robust room temperature gas sensor. The device was carefully designed and fabricated using standard integrated processing to achieve the 16 nm EFN that can be used for sensing without any need for surface modification. The effective diameter for the EFN was determined using Kelvin probe force microscopy accompanied by threedimensional electrostatic simulations. We show that the EFN transistor is capable of detecting 100 parts per million of ethanol gas with bare SiO₂. [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	2206-2215
Number of pages	10
Journal	Nano Research
Volume	8
Issue number	7
DOIs	https://doi.org/10.1007/s12274-015-0730-1
State	Published - 25 Jul 2015

Keywords

Kelvin probe force microscopy (KPFM)
electrostatic confinement
gas sensing
multiple gate transistor
silicon nanowires

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10.1007/s12274-015-0730-1

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@article{83df36e5a1b04296bf13a7c5c3b064fd,

title = "Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing",

abstract = "We report on an electrostatically formed nanowire (EFN)-based sensor with tunable diameters in the range of 16 nm to 46 nm and demonstrate an EFNbased field-effect transistor as a highly sensitive and robust room temperature gas sensor. The device was carefully designed and fabricated using standard integrated processing to achieve the 16 nm EFN that can be used for sensing without any need for surface modification. The effective diameter for the EFN was determined using Kelvin probe force microscopy accompanied by threedimensional electrostatic simulations. We show that the EFN transistor is capable of detecting 100 parts per million of ethanol gas with bare SiO2. [Figure not available: see fulltext.]",

keywords = "Kelvin probe force microscopy (KPFM), electrostatic confinement, gas sensing, multiple gate transistor, silicon nanowires",

author = "Alex Henning and Nandhini Swaminathan and Andrey Godkin and Gil Shalev and Iddo Amit and Yossi Rosenwaks",

note = "Publisher Copyright: {\textcopyright} 2015, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.",

year = "2015",

month = jul,

day = "25",

doi = "10.1007/s12274-015-0730-1",

language = "אנגלית",

volume = "8",

pages = "2206--2215",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Tsinghua University Press",

number = "7",

}

TY - JOUR

T1 - Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

AU - Henning, Alex

AU - Swaminathan, Nandhini

AU - Godkin, Andrey

AU - Shalev, Gil

AU - Amit, Iddo

AU - Rosenwaks, Yossi

PY - 2015/7/25

Y1 - 2015/7/25

N2 - We report on an electrostatically formed nanowire (EFN)-based sensor with tunable diameters in the range of 16 nm to 46 nm and demonstrate an EFNbased field-effect transistor as a highly sensitive and robust room temperature gas sensor. The device was carefully designed and fabricated using standard integrated processing to achieve the 16 nm EFN that can be used for sensing without any need for surface modification. The effective diameter for the EFN was determined using Kelvin probe force microscopy accompanied by threedimensional electrostatic simulations. We show that the EFN transistor is capable of detecting 100 parts per million of ethanol gas with bare SiO2. [Figure not available: see fulltext.]

AB - We report on an electrostatically formed nanowire (EFN)-based sensor with tunable diameters in the range of 16 nm to 46 nm and demonstrate an EFNbased field-effect transistor as a highly sensitive and robust room temperature gas sensor. The device was carefully designed and fabricated using standard integrated processing to achieve the 16 nm EFN that can be used for sensing without any need for surface modification. The effective diameter for the EFN was determined using Kelvin probe force microscopy accompanied by threedimensional electrostatic simulations. We show that the EFN transistor is capable of detecting 100 parts per million of ethanol gas with bare SiO2. [Figure not available: see fulltext.]

KW - Kelvin probe force microscopy (KPFM)

KW - electrostatic confinement

KW - gas sensing

KW - multiple gate transistor

KW - silicon nanowires

UR - http://www.scopus.com/inward/record.url?scp=84937973751&partnerID=8YFLogxK

U2 - 10.1007/s12274-015-0730-1

DO - 10.1007/s12274-015-0730-1

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84937973751

SN - 1998-0124

VL - 8

SP - 2206

EP - 2215

JO - Nano Research

JF - Nano Research

IS - 7

ER -

Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

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Keywords

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