Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

Alex Henning, Nandhini Swaminathan, Andrey Godkin, Gil Shalev, Iddo Amit, Yossi Rosenwaks*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report on an electrostatically formed nanowire (EFN)-based sensor with tunable diameters in the range of 16 nm to 46 nm and demonstrate an EFNbased field-effect transistor as a highly sensitive and robust room temperature gas sensor. The device was carefully designed and fabricated using standard integrated processing to achieve the 16 nm EFN that can be used for sensing without any need for surface modification. The effective diameter for the EFN was determined using Kelvin probe force microscopy accompanied by threedimensional electrostatic simulations. We show that the EFN transistor is capable of detecting 100 parts per million of ethanol gas with bare SiO2. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)2206-2215
Number of pages10
JournalNano Research
Issue number7
StatePublished - 25 Jul 2015


  • Kelvin probe force microscopy (KPFM)
  • electrostatic confinement
  • gas sensing
  • multiple gate transistor
  • silicon nanowires


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