Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device

Eli Lusky*, Yosi Shacham-Diamand, Assaf Shappir, Ilan Bloom, Boaz Eitan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

A spectroscopy method for implementing Si3Ni4 layers using NROM cell and gate-induced-drain-leakage measurements was discussed. Probing of electron and hole traps in the band gap with no fitting parameters was also discussed. The energy levels of occupied charge traps were extracted. Results showed that the peak energy distribution of the electron traps was located ∼2.2 ev below the Nitride conduction band. The gate-induced-drain-leakage (GIDL) measurements provide the highest sensitivity to holes and electrons.

Original languageEnglish
Pages (from-to)669-671
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number4
DOIs
StatePublished - 26 Jul 2004

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