Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device

Eli Lusky; Yosi Shacham-Diamand; Assaf Shappir; Ilan Bloom; Boaz Eitan

doi:10.1063/1.1774272

Traps spectroscopy of the Si₃Ni₄ layer using localized charge-trapping nonvolatile memory device

Eli Lusky^*, Yosi Shacham-Diamand, Assaf Shappir, Ilan Bloom, Boaz Eitan

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A spectroscopy method for implementing Si₃Ni₄ layers using NROM cell and gate-induced-drain-leakage measurements was discussed. Probing of electron and hole traps in the band gap with no fitting parameters was also discussed. The energy levels of occupied charge traps were extracted. Results showed that the peak energy distribution of the electron traps was located ∼2.2 ev below the Nitride conduction band. The gate-induced-drain-leakage (GIDL) measurements provide the highest sensitivity to holes and electrons.

Original language	English
Pages (from-to)	669-671
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	4
DOIs	https://doi.org/10.1063/1.1774272
State	Published - 26 Jul 2004

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@article{e4530dd3c2714ea78e03dd5d70c6aa8d,

title = "Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device",

abstract = "A spectroscopy method for implementing Si3Ni4 layers using NROM cell and gate-induced-drain-leakage measurements was discussed. Probing of electron and hole traps in the band gap with no fitting parameters was also discussed. The energy levels of occupied charge traps were extracted. Results showed that the peak energy distribution of the electron traps was located ∼2.2 ev below the Nitride conduction band. The gate-induced-drain-leakage (GIDL) measurements provide the highest sensitivity to holes and electrons.",

author = "Eli Lusky and Yosi Shacham-Diamand and Assaf Shappir and Ilan Bloom and Boaz Eitan",

year = "2004",

month = jul,

day = "26",

doi = "10.1063/1.1774272",

language = "אנגלית",

volume = "85",

pages = "669--671",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device

AU - Lusky, Eli

AU - Shacham-Diamand, Yosi

AU - Shappir, Assaf

AU - Bloom, Ilan

AU - Eitan, Boaz

PY - 2004/7/26

Y1 - 2004/7/26

N2 - A spectroscopy method for implementing Si3Ni4 layers using NROM cell and gate-induced-drain-leakage measurements was discussed. Probing of electron and hole traps in the band gap with no fitting parameters was also discussed. The energy levels of occupied charge traps were extracted. Results showed that the peak energy distribution of the electron traps was located ∼2.2 ev below the Nitride conduction band. The gate-induced-drain-leakage (GIDL) measurements provide the highest sensitivity to holes and electrons.

AB - A spectroscopy method for implementing Si3Ni4 layers using NROM cell and gate-induced-drain-leakage measurements was discussed. Probing of electron and hole traps in the band gap with no fitting parameters was also discussed. The energy levels of occupied charge traps were extracted. Results showed that the peak energy distribution of the electron traps was located ∼2.2 ev below the Nitride conduction band. The gate-induced-drain-leakage (GIDL) measurements provide the highest sensitivity to holes and electrons.

UR - http://www.scopus.com/inward/record.url?scp=4043151991&partnerID=8YFLogxK

U2 - 10.1063/1.1774272

DO - 10.1063/1.1774272

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:4043151991

SN - 0003-6951

VL - 85

SP - 669

EP - 671

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Traps spectroscopy of the Si₃Ni₄ layer using localized charge-trapping nonvolatile memory device

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