TY - JOUR
T1 - Trap spectroscopy in Si3N4 ultrathin films using exoelectron emission method
AU - Naich, M.
AU - Rosenman, G.
AU - Molotskii, M.
AU - Roizin, Ya
PY - 2002
Y1 - 2002
N2 - We developed an original thermally stimulated exoelectron emission spectroscopy method (TSEE) of measurements of the activation energy Φ of electron (hole) traps in ultrathin Si3N4 films. The temperature spectra of TSEE of 50A silicon nitride films demonstrate several peaks: three low temperature peaks (T1 =373K, T2=423K, T3=498K) and a high temperature maximum at T4 ∼750K. The obtained values of the energy activation are Φ1=0.82 eV, Φ2=0.93 eV, Φ3=1.09 eV, and Φ4=1.73 eV. TSEE results are shown to be consistent with φ estimates obtained from MicroFLASH® two bit per cell memory transistor measurements. Electrons stored at traps with Φ4=1.73 eV explain excellent microFlash retention properties. We believe that deep traps in Silicon Nitride are Hydrogen containing centers, while Hydrogen hopping is the route cause of observed material degradation in course of TSEE measurements.
AB - We developed an original thermally stimulated exoelectron emission spectroscopy method (TSEE) of measurements of the activation energy Φ of electron (hole) traps in ultrathin Si3N4 films. The temperature spectra of TSEE of 50A silicon nitride films demonstrate several peaks: three low temperature peaks (T1 =373K, T2=423K, T3=498K) and a high temperature maximum at T4 ∼750K. The obtained values of the energy activation are Φ1=0.82 eV, Φ2=0.93 eV, Φ3=1.09 eV, and Φ4=1.73 eV. TSEE results are shown to be consistent with φ estimates obtained from MicroFLASH® two bit per cell memory transistor measurements. Electrons stored at traps with Φ4=1.73 eV explain excellent microFlash retention properties. We believe that deep traps in Silicon Nitride are Hydrogen containing centers, while Hydrogen hopping is the route cause of observed material degradation in course of TSEE measurements.
UR - http://www.scopus.com/inward/record.url?scp=0038632130&partnerID=8YFLogxK
U2 - 10.1557/proc-745-n5.21
DO - 10.1557/proc-745-n5.21
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AN - SCOPUS:0038632130
SN - 0272-9172
VL - 745
SP - 215
EP - 219
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Novel Materials and Processes for Advanced CMOS
Y2 - 2 December 2002 through 4 December 2002
ER -