TY - JOUR
T1 - Transverse magnetoresistance behaviors of thin polycrystalline bismuth films
AU - Rosenbaum, Rachel
AU - Galibert, J.
N1 - Funding Information:
We thank Dr. Florence Lecouturier of the LNCMP for taking the optical microscope pictures of the polycrystalline bismuth films. We are much obliged to Dr. Jean-Luc Gauffier at the Laboratory of Nanophys-ics, Magnetism and Optoelectronics of INSA-CNRS in Toulouse for complementary SEM images. We acknowledge Drs. Eric Palm, Tim Murphy and Bruce Brandt and Mr. Glover Jones for professional and technical assistance at the NHMFL. We thank Dr. A. Nikolaeva of the Academy of Sciences, Kishinev, Moldava for bringing to our attention the boundary scattering theory of Way and Kao. We are obliged to Mrs. Rachel Rosenbaum for editing assistance. A part of this work was performed at the NHMFL, which is supported by the NSF Cooperative Agreement No. DMR 9527035 and by the State of Florida. We greatly thank the Centre National de la Recherche Scientifique and the Université Paul Sabatier and INSA in Toulouse for supporting the pulsed magnet research phase of this research at LNCMP, where the anomalous transverse magnetoresistance behavior was first observed and then investigated in much greater detail.
PY - 2005/3
Y1 - 2005/3
N2 - The magnetoresistance (MR) properties of several thin polycrystalline bismuth films have been measured over a wide temperature interval (0.42 K ≤ T ≤ 292 K) and a magnetic field range (0T ≤ B ≤ 45T). In most cases, the magnetic field was oriented in the transverse direction, with the field parallel to the substrate of the film and also perpendicular to the current direction. These MR results are different from those in either the perpendicular or parallel field orientations. The anomalous behavior of the transverse magnetoresistance can be explained considering partially diffused scattering of the carriers at the top and bottom surfaces of the films. The data are fitted using a phenomenological model, based upon the theory of Way and Kao and also using the two carrier expressions of Pippard and Fawcett (P-F).
AB - The magnetoresistance (MR) properties of several thin polycrystalline bismuth films have been measured over a wide temperature interval (0.42 K ≤ T ≤ 292 K) and a magnetic field range (0T ≤ B ≤ 45T). In most cases, the magnetic field was oriented in the transverse direction, with the field parallel to the substrate of the film and also perpendicular to the current direction. These MR results are different from those in either the perpendicular or parallel field orientations. The anomalous behavior of the transverse magnetoresistance can be explained considering partially diffused scattering of the carriers at the top and bottom surfaces of the films. The data are fitted using a phenomenological model, based upon the theory of Way and Kao and also using the two carrier expressions of Pippard and Fawcett (P-F).
KW - Bismuth
KW - Electronic transport
KW - Polycrystalline thin films
KW - Transverse magnetoresistance
UR - http://www.scopus.com/inward/record.url?scp=23644462411&partnerID=8YFLogxK
U2 - 10.1007/s10909-004-2900-5
DO - 10.1007/s10909-004-2900-5
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AN - SCOPUS:23644462411
SN - 0022-2291
VL - 138
SP - 1077
EP - 1092
JO - Journal of Low Temperature Physics
JF - Journal of Low Temperature Physics
IS - 5-6
ER -