Abstract
In order to determine the role of polar monolayers in molecular-gated transistors we combine Kelvin probe force microscopy and current-voltage measurements of hybrid silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Layers having alternating net-dipole direction were self-assembled on the top dielectric layer of the transistors. Nonzero field-effect was observed only with an amine-terminated monolayer and is attributed to the protonation of the amine groups. No correlation between the field-effect and the net-dipole of the molecular layers was found; this effect is discussed and explained.
Original language | English |
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Article number | 053501 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 5 |
DOIs | |
State | Published - 2 Aug 2010 |