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Tracing the mechanism of molecular gated transistors
O. Shaya
, M. Snaked
, Y. Usherenko
, E. Halpern
, G. Shalev
, A. Doron
, I. Levy
,
Y. Rosenwaks
*
*
Corresponding author for this work
Department of Electrical Engineering - Physical Eng.
Tel Aviv University
Intel
Research output
:
Contribution to journal
›
Article
›
peer-review
18
Scopus citations
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Keyphrases
Transistor
100%
Silicon Oxide
50%
Linker Peptide
50%
Induced Charge
25%
Self-assembly
25%
Metal Gate
25%
Current-voltage Measurements
25%
Dipole
25%
Surface Coverage
25%
Biosensing
25%
Device Simulation
25%
Molecular Building Blocks
25%
Work Function
25%
Field Effect
25%
Effect-based Methods
25%
Threshold Voltage
25%
Field-effect Transistors
25%
Scanning Kelvin Probe Force Microscopy (SKPFM)
25%
Silicon-on-insulator
25%
Dielectric Layer
25%
Transistor Channel
25%
Triethoxysilane
25%
Oxide Surfaces
25%
Biofield
25%
Gate Voltage
25%
3-aminopropyltrimethoxysilane
25%
Biological Field
25%
Molecular Charge
25%
Engineering
Transistor
100%
Silicon Oxide
66%
Building Block
33%
Induced Charge
33%
Biosensing
33%
Gate Voltage
33%
Silicon on Insulator
33%
Dielectric Layer
33%
Field-Effect Transistor
33%
Metal Gate
33%
Channel Transistor
33%
Effect Transistor
33%
Monolayers
33%
Electrical Measurement
33%
Bioinstrumentation
33%
Material Science
Transistor
100%
Silicon
60%
Self Assembly
20%
Oxide Compound
20%
Monolayers
20%
Field Effect Transistor
20%
Oxide Surface
20%
Dielectric Material
20%
Biosensor
20%