Towards Post-CMOS Molecular Logic Devices

Roy Hakim; Elad. D. Mentovich; Shachar Richter; Nicolas Lorente; Christian Joachim

doi:https://doi.org/10.1007/978-3-642-33137-4_2

Towards Post-CMOS Molecular Logic Devices

Roy Hakim, Elad. D. Mentovich, Shachar Richter, Nicolas Lorente (Editor), Christian Joachim (Editor)

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The use of molecular devices in post-CMOS devices and structures is described. Particularly we demonstrate the fabrication and characterization of two-novel devices: a two-terminal device which exhibits a two-negative differential resistance peaks and a sub-10-nm-channel vertical molecular transistor which contains a molecular quantum-dot compound. We show that the latter device can be operated in two distinct modes: gate-controlled switch and gate-controlled hysteresis.

Original language	English
Title of host publication	Architecture and Design of Molecule Logic Gates and Atom Circuits
Subtitle of host publication	Proceedings of the 2nd AtMol European Workshop
Publisher	Springer
Pages	13-24
Number of pages	12
ISBN (Electronic)	978-3-642-33137-4
ISBN (Print)	978-3-642-33136-7
DOIs	https://doi.org/10.1007/978-3-642-33137-4_2
State	Published - 2013

Publication series

Name	Advances in Atom and Single Molecule Machines
Publisher	springer

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https://doi.org/10.1007/978-3-642-33137-4_2

Cite this

@inproceedings{d27cd777b3fb4a5db9aab484016cb08a,

title = "Towards Post-CMOS Molecular Logic Devices",

abstract = "The use of molecular devices in post-CMOS devices and structures is described. Particularly we demonstrate the fabrication and characterization of two-novel devices: a two-terminal device which exhibits a two-negative differential resistance peaks and a sub-10-nm-channel vertical molecular transistor which contains a molecular quantum-dot compound. We show that the latter device can be operated in two distinct modes: gate-controlled switch and gate-controlled hysteresis.",

keywords = "Technology Node, Negative Differential Resistance, Molecular Junction, Static Random Access Memory, Static Random Access Memory Cell",

author = "Roy Hakim and Mentovich, {Elad. D.} and Shachar Richter and Nicolas Lorente and Christian Joachim",

year = "2013",

doi = "https://doi.org/10.1007/978-3-642-33137-4_2",

language = "אנגלית",

isbn = "978-3-642-33136-7",

series = "Advances in Atom and Single Molecule Machines",

publisher = "Springer",

pages = "13--24",

booktitle = "Architecture and Design of Molecule Logic Gates and Atom Circuits",

}

Towards Post-CMOS Molecular Logic Devices. / Hakim, Roy; Mentovich, Elad. D.; Richter, Shachar et al.
Architecture and Design of Molecule Logic Gates and Atom Circuits: Proceedings of the 2nd AtMol European Workshop. Springer, 2013. p. 13-24 (Advances in Atom and Single Molecule Machines).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Towards Post-CMOS Molecular Logic Devices

AU - Hakim, Roy

AU - Mentovich, Elad. D.

AU - Richter, Shachar

A2 - Lorente, Nicolas

A2 - Joachim, Christian

PY - 2013

Y1 - 2013

N2 - The use of molecular devices in post-CMOS devices and structures is described. Particularly we demonstrate the fabrication and characterization of two-novel devices: a two-terminal device which exhibits a two-negative differential resistance peaks and a sub-10-nm-channel vertical molecular transistor which contains a molecular quantum-dot compound. We show that the latter device can be operated in two distinct modes: gate-controlled switch and gate-controlled hysteresis.

AB - The use of molecular devices in post-CMOS devices and structures is described. Particularly we demonstrate the fabrication and characterization of two-novel devices: a two-terminal device which exhibits a two-negative differential resistance peaks and a sub-10-nm-channel vertical molecular transistor which contains a molecular quantum-dot compound. We show that the latter device can be operated in two distinct modes: gate-controlled switch and gate-controlled hysteresis.

KW - Technology Node

KW - Negative Differential Resistance

KW - Molecular Junction

KW - Static Random Access Memory

KW - Static Random Access Memory Cell

U2 - https://doi.org/10.1007/978-3-642-33137-4_2

DO - https://doi.org/10.1007/978-3-642-33137-4_2

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

SN - 978-3-642-33136-7

T3 - Advances in Atom and Single Molecule Machines

SP - 13

EP - 24

BT - Architecture and Design of Molecule Logic Gates and Atom Circuits

PB - Springer

ER -

Towards Post-CMOS Molecular Logic Devices

Abstract

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