The use of molecular devices in post-CMOS devices and structures is described. Particularly we demonstrate the fabrication and characterization of two-novel devices: a two-terminal device which exhibits a two-negative differential resistance peaks and a sub-10-nm-channel vertical molecular transistor which contains a molecular quantum-dot compound. We show that the latter device can be operated in two distinct modes: gate-controlled switch and gate-controlled hysteresis.
|Title of host publication||Architecture and Design of Molecule Logic Gates and Atom Circuits|
|Subtitle of host publication||Proceedings of the 2nd AtMol European Workshop|
|Number of pages||12|
|State||Published - 2013|
|Name||Advances in Atom and Single Molecule Machines|