Toward the controlled synthesis of hexagonal boron nitride films

Ariel Ismach*, Harry Chou, Domingo A. Ferrer, Yaping Wu, Stephen McDonnell, Herman C. Floresca, Alan Covacevich, Cody Pope, Richard Piner, Moon J. Kim, Robert M. Wallace, Luigi Colombo, Rodney S. Ruoff

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.

Original languageEnglish
Pages (from-to)6378-6385
Number of pages8
JournalACS Nano
Volume6
Issue number7
DOIs
StatePublished - 24 Jul 2012
Externally publishedYes

Keywords

  • 2D Raman mapping
  • CVD
  • h-BN
  • hexagonal boron nitride
  • sequential growth

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