TY - JOUR
T1 - Threshold voltage variability of NROM memories after exposure to ionizing radiation
AU - Corso, Domenico
AU - Libertino, Sebania
AU - Lisiansky, Michael
AU - Roizin, Yakov
AU - Palumbo, Felix
AU - Principato, Fabio
AU - Pace, Calogero
AU - Finocchiaro, Paolo
AU - Lombardo, Salvatore A.
N1 - Funding Information:
Manuscript received February 7, 2012; revised May 21, 2012; accepted June 25, 2012. Date of publication August 24, 2012; date of current version September 18, 2012. This work was supported by “con il contributo del Ministero degli Affari Esteri, Direzione Generale per la Promozione del Sistema Paese,” through the Progetto di Grande Rilevanza Italia–Argentina “Caratterizzazione durante e post-irraggiamento di dispositivi microelettronici per applicazioni avioniche o spaziali.” The review of this paper was arranged by Editor H. Shang.
PY - 2012
Y1 - 2012
N2 - Threshold voltage (Vth) behavior of nitride read-only memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k∼2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiation tolerance of NROM memory arrays.
AB - Threshold voltage (Vth) behavior of nitride read-only memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k∼2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiation tolerance of NROM memory arrays.
KW - Flash memories
KW - nitride read-only memories (NROMs)
KW - oxide-nitride-oxide (ONO)
KW - radiation hardness
UR - http://www.scopus.com/inward/record.url?scp=84866742755&partnerID=8YFLogxK
U2 - 10.1109/TED.2012.2206596
DO - 10.1109/TED.2012.2206596
M3 - מאמר
AN - SCOPUS:84866742755
VL - 59
SP - 2597
EP - 2602
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
M1 - 6287009
ER -