Threshold Logic With Electrostatically Formed Nanowires

Joseph S. Friedman, Andrey Godkin, Alex Henning, Yonatan Vaknin, Yossi Rosenwaks, Alan V. Sahakian

Research output: Contribution to journalArticlepeer-review


The modulation of current through an electrostatically formed nanowire (EFN) is controlled by the voltage on the four input gates. The behavior of this multi-gate transistor can be interpreted as a complex four-input switching process, enabling the computation of multiple-input threshold logic functions using a single device. We have therefore created a novel threshold logic family leveraging these unique capabilities that enables the efficient computation of complex logic functions. Experimental and simulation data are provided to demonstrate feasibility and evaluate behavior. This logic family overcomes the challenge posed by the input-output voltage mismatch inherent to EFNs and produces circuits with one-eighth the number of active logic devices and one-quarter the number of transistors required by CMOS.

Original languageEnglish
Article number7387761
Pages (from-to)1388-1391
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 2016


  • Beyond-CMOS computing
  • FETs
  • nanowire
  • threshold logic


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