Three-dimensional nature of the band structure of ZrTe5 measured by high-momentum-resolution photoemission spectroscopy

H. Xiong, J. A. Sobota, S. L. Yang, H. Soifer, A. Gauthier, M. H. Lu, Y. Y. Lv, S. H. Yao, D. Lu, M. Hashimoto, P. S. Kirchmann, Y. F. Chen, Z. X. Shen

Research output: Contribution to journalArticlepeer-review

Abstract

We have performed a systematic high-momentum-resolution photoemission study on ZrTe5 using 6-eV photon energy. We have measured the band structure near the Γ point, and quantified the gap between the conduction and valence band as 18≤Δ≤29 meV. We have also observed photon-energy-dependent behavior attributed to final-state effects and the three-dimensional (3D) nature of the material's band structure. Our interpretation indicates the gap is intrinsic and reconciles discrepancies on the existence of a topological surface state reported by different studies. The existence of a gap suggests that ZrTe5 is not a 3D strong topological insulator nor a 3D Dirac semimetal. Therefore, our experiment is consistent with ZrTe5 being a 3D weak topological insulator.

Original languageEnglish
Article number195119
JournalPhysical Review B
Volume95
Issue number19
DOIs
StatePublished - 10 May 2017
Externally publishedYes

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