TY - CHAP
T1 - Thin film deposition by plasma beam of a vacuum arc with refractory anodes
AU - Beilis, I. I.
AU - Boxman, R. L.
N1 - Publisher Copyright:
© Springer Nature Singapore Pte Ltd. 2019.
PY - 2019
Y1 - 2019
N2 - Thin film deposition using hot anode vacuum arcs developed in the last decade is described. Two configurations were used: (i) with an open gap—the hot refractory anode vacuum arc (HRAVA) and (ii) with a closed gap—the vacuum arc with black body assembly (VABBA). In both configurations, the anode was heated by the arc with current I = 145–340 A, and a relatively dense plasma plume of cathode material (Cu, Ti, Cr, Al, Sn, Mo, Nb), was formed by re-evaporation of cathode material from the hot (2000–2500 K) anode, which was fabricated from graphite, Mo, Ta, or W. A steady state mode was reached when the anode was sufficiently hot and a plasma plume expanded, either radially (HRAVA) or directly from the front hot anode surface. As an example, the deposition rate measured in 300 A HRAVAs at distances of 80 mm from the arc axis, to be 3.6; 1.4 and 1.8 μm/min for Cu, Cr and Ti cathodes respectively. Interconnector trenches (100 nm wide ×300 nm deep) on microelectronic wafers were filled using a Cu HRAVA at a rate of 0.5 µm/min.
AB - Thin film deposition using hot anode vacuum arcs developed in the last decade is described. Two configurations were used: (i) with an open gap—the hot refractory anode vacuum arc (HRAVA) and (ii) with a closed gap—the vacuum arc with black body assembly (VABBA). In both configurations, the anode was heated by the arc with current I = 145–340 A, and a relatively dense plasma plume of cathode material (Cu, Ti, Cr, Al, Sn, Mo, Nb), was formed by re-evaporation of cathode material from the hot (2000–2500 K) anode, which was fabricated from graphite, Mo, Ta, or W. A steady state mode was reached when the anode was sufficiently hot and a plasma plume expanded, either radially (HRAVA) or directly from the front hot anode surface. As an example, the deposition rate measured in 300 A HRAVAs at distances of 80 mm from the arc axis, to be 3.6; 1.4 and 1.8 μm/min for Cu, Cr and Ti cathodes respectively. Interconnector trenches (100 nm wide ×300 nm deep) on microelectronic wafers were filled using a Cu HRAVA at a rate of 0.5 µm/min.
KW - Deposition rate
KW - Interconnector trenches
KW - Refractory anode
KW - Thin film
KW - Vacuum arc
UR - http://www.scopus.com/inward/record.url?scp=85062469612&partnerID=8YFLogxK
U2 - 10.1007/978-981-13-6133-3_1
DO - 10.1007/978-981-13-6133-3_1
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AN - SCOPUS:85062469612
T3 - Lecture Notes in Mechanical Engineering
SP - 1
EP - 15
BT - Lecture Notes in Mechanical Engineering
PB - Pleiades journals
ER -