Thickness profiles of SiO2 films deposited from tetraethoxysilane/O3 precursors in ultra-high-aspect-ratio capillaries

R. J. Soave, S. Ganguli, W. N. Gill, Y. Shacham-Diamand, J. W. Mayer

Research output: Contribution to journalArticlepeer-review

Abstract

Thickness profiles of silicon dioxide films deposited by ozone-augmented tetraethoxysilane have been experimentally measured in ultra-high-aspect ratio capillaries. The deposition profiles exhibit a sharp drop in film thickness near the capillary entrance followed by a gradual decrease in thickness along the capillary. A feature-scale model for this process has been developed which includes the effect of by-products on the reaction kinetics and transport inside the structure. Simulated deposition profiles agree well with the experimental data, indicating that a trapped by-product inside the capillary inhibits the film-forming reaction, thus producing the characteristic film profile.

Original languageEnglish
Pages (from-to)3286
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995
Externally publishedYes

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