Thickness profiles of SiO2 films deposited from tetraethoxysilane/O3 precursors in ultra-high-aspect-ratio capillaries

R. J. Soave; S. Ganguli; W. N. Gill; Y. Shacham-Diamand; J. W. Mayer

doi:10.1063/1.115222

Thickness profiles of SiO₂ films deposited from tetraethoxysilane/O₃ precursors in ultra-high-aspect-ratio capillaries

R. J. Soave^*, S. Ganguli, W. N. Gill, Y. Shacham-Diamand, J. W. Mayer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Thickness profiles of silicon dioxide films deposited by ozone-augmented tetraethoxysilane have been experimentally measured in ultra-high-aspect ratio capillaries. The deposition profiles exhibit a sharp drop in film thickness near the capillary entrance followed by a gradual decrease in thickness along the capillary. A feature-scale model for this process has been developed which includes the effect of by-products on the reaction kinetics and transport inside the structure. Simulated deposition profiles agree well with the experimental data, indicating that a trapped by-product inside the capillary inhibits the film-forming reaction, thus producing the characteristic film profile.

Original language	English
Pages (from-to)	3286
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115222
State	Published - 1995
Externally published	Yes

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author = "Soave, {R. J.} and S. Ganguli and Gill, {W. N.} and Y. Shacham-Diamand and Mayer, {J. W.}",

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AU - Soave, R. J.

AU - Ganguli, S.

AU - Gill, W. N.

AU - Shacham-Diamand, Y.

AU - Mayer, J. W.

PY - 1995

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AB - Thickness profiles of silicon dioxide films deposited by ozone-augmented tetraethoxysilane have been experimentally measured in ultra-high-aspect ratio capillaries. The deposition profiles exhibit a sharp drop in film thickness near the capillary entrance followed by a gradual decrease in thickness along the capillary. A feature-scale model for this process has been developed which includes the effect of by-products on the reaction kinetics and transport inside the structure. Simulated deposition profiles agree well with the experimental data, indicating that a trapped by-product inside the capillary inhibits the film-forming reaction, thus producing the characteristic film profile.

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Thickness profiles of SiO₂ films deposited from tetraethoxysilane/O₃ precursors in ultra-high-aspect-ratio capillaries

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