Thermal annealing effects on gamma irradiated Ni/4H-SiC Schottky barrier diode (SBD) characteristics are analyzed over a wide range of temperatures (400-1100 C). The annealing induced variations in the concentration of deep level traps in the SBDs are identified by thermally stimulated capacitance (TSCAP). A little decrease in the trap density at E C - 0.63 eV and E C - 1.13 eV is observed up to the annealing temperature of 600 C. Whereas, a gamma induced trap at E C - 0.89 eV disappeared after annealing at 500 C, revealing that its concentration (< 10 13 cm -3 ) is reduced below the detection limit of the TSCAP technique. The electrical characteristics of irradiated SBDs are considerably changed at each annealing temperature. To understand the anomalous variations in the post-annealing characteristics, the interface state density distribution in the annealed SBDs is extracted. The electrical properties are improved at 400 C due to the reduction in the interface trap density. However, from 500 C, the electrical parameters are found to degrade with the annealing temperature because of the increase in the interface trap density. From the results, it is noted that the rectifying nature of the SBDs vanishes at or above 800 C.
- 4H-silicon carbide
- Schottky barrier diode
- electrically active defects
- thermal annealing
- thermally timulated capacitance