TY - JOUR
T1 - Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization
AU - Shalish, Ilan
AU - Shapira, Yoram
PY - 1999
Y1 - 1999
N2 - Depth profiling by backscattering spectrometry, x-ray photoelectron spectroscopy and diffractometry, scanning electron microscopy, and sheet resistance measurements were used to study the thermal stability of ternary Ti27Si20N53films as diffusion barriers between a gold overlayer and substrates of aluminum nitride, silicon oxide, and β-silicon carbide when thin titanium films are added on either side of the barrier to enhance adhesion. It is shown that titanium and gold interdiffuse upon 30 min annealing in vacuum at 400°C and above, which raises the sheet resistance of the gold layer by factors that increase with the amount of titanium present. For the same annealing ambient and duration, nitrogen begins to diffuse at 600°C from the Ti27Si20N53layer into the titanium layer, releasing silicon. This silicon reacts eutectoidally with the gold, leading to breakup of the barrier.
AB - Depth profiling by backscattering spectrometry, x-ray photoelectron spectroscopy and diffractometry, scanning electron microscopy, and sheet resistance measurements were used to study the thermal stability of ternary Ti27Si20N53films as diffusion barriers between a gold overlayer and substrates of aluminum nitride, silicon oxide, and β-silicon carbide when thin titanium films are added on either side of the barrier to enhance adhesion. It is shown that titanium and gold interdiffuse upon 30 min annealing in vacuum at 400°C and above, which raises the sheet resistance of the gold layer by factors that increase with the amount of titanium present. For the same annealing ambient and duration, nitrogen begins to diffuse at 600°C from the Ti27Si20N53layer into the titanium layer, releasing silicon. This silicon reacts eutectoidally with the gold, leading to breakup of the barrier.
UR - http://www.scopus.com/inward/record.url?scp=84976384272&partnerID=8YFLogxK
U2 - 10.1116/1.590531
DO - 10.1116/1.590531
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AN - SCOPUS:84976384272
SN - 1071-1023
VL - 17
SP - 166
EP - 173
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 1
ER -