Thermal stability issues in copper based metallization

Jian Li, Y. Shacham-Diamand, J. W. Mayer, E. G. Colgan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

19 Scopus citations

Abstract

The thermally induced reactions in Cu/Si, Cu/metal, Cu/silicide and Cu/dielectric films have been studied by both Rutherford backscattering and Auger electron spectroscopy. Diffusion barrier layers (TiN, TiW, Ta, Cr and Co) have been tested in the Cu based metallization regime. Alloying Cu with other elements (Pd, Ti, Cr and Al) can significantly prevent Cu from oxidation. Methods to produce Cu thin films (e.g.electroless Cu) have been summarized.

Original languageEnglish
Title of host publication1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages153-159
Number of pages7
ISBN (Electronic)087942673X, 9780879426736
DOIs
StatePublished - 1991
Externally publishedYes
Event8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991 - Santa Clara, United States
Duration: 11 Jun 199112 Jun 1991

Publication series

Name1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991

Conference

Conference8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
Country/TerritoryUnited States
CitySanta Clara
Period11/06/9112/06/91

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