TY - GEN
T1 - Thermal stability issues in copper based metallization
AU - Li, Jian
AU - Shacham-Diamand, Y.
AU - Mayer, J. W.
AU - Colgan, E. G.
N1 - Publisher Copyright:
© 1991 IEEE.
PY - 1991
Y1 - 1991
N2 - The thermally induced reactions in Cu/Si, Cu/metal, Cu/silicide and Cu/dielectric films have been studied by both Rutherford backscattering and Auger electron spectroscopy. Diffusion barrier layers (TiN, TiW, Ta, Cr and Co) have been tested in the Cu based metallization regime. Alloying Cu with other elements (Pd, Ti, Cr and Al) can significantly prevent Cu from oxidation. Methods to produce Cu thin films (e.g.electroless Cu) have been summarized.
AB - The thermally induced reactions in Cu/Si, Cu/metal, Cu/silicide and Cu/dielectric films have been studied by both Rutherford backscattering and Auger electron spectroscopy. Diffusion barrier layers (TiN, TiW, Ta, Cr and Co) have been tested in the Cu based metallization regime. Alloying Cu with other elements (Pd, Ti, Cr and Al) can significantly prevent Cu from oxidation. Methods to produce Cu thin films (e.g.electroless Cu) have been summarized.
UR - http://www.scopus.com/inward/record.url?scp=84954064522&partnerID=8YFLogxK
U2 - 10.1109/VMIC.1991.152979
DO - 10.1109/VMIC.1991.152979
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AN - SCOPUS:84954064522
T3 - 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
SP - 153
EP - 159
BT - 1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
Y2 - 11 June 1991 through 12 June 1991
ER -