Thermal properties of charge noise sources

Martin V. Gustafsson*, Arsalan Pourkabirian, Göran Johansson, John Clarke, Per Delsing

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.

Original languageEnglish
Article number245410
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - 10 Dec 2013
Externally publishedYes


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