TY - JOUR
T1 - Thermal properties of charge noise sources
AU - Gustafsson, Martin V.
AU - Pourkabirian, Arsalan
AU - Johansson, Göran
AU - Clarke, John
AU - Delsing, Per
PY - 2013/12/10
Y1 - 2013/12/10
N2 - Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.
AB - Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.
UR - http://www.scopus.com/inward/record.url?scp=84890680401&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.88.245410
DO - 10.1103/PhysRevB.88.245410
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AN - SCOPUS:84890680401
SN - 1098-0121
VL - 88
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
M1 - 245410
ER -