Keyphrases
High Field
100%
Quantum Well
100%
Si1-xGex
100%
Hole Transport
100%
PMOSFET
100%
MOSFET
50%
P-channel
50%
Mole Fraction
33%
Drift Velocity
33%
Strained SiGe
33%
Transistor
16%
Low Thermal Budget
16%
High Energy
16%
Mass Reduction
16%
Nanometer Scale
16%
Electron Beam Lithography
16%
Effective Mass
16%
Molecular Beam Epitaxy
16%
VLSI Applications
16%
Quantum Heterostructure
16%
Current Capability
16%
High-speed Low-power
16%
Phonon Spectrum
16%
Optical Phonons
16%
SiGe Quantum Well
16%
Strained Si
16%
Drive Current
16%
SiGe Layer
16%
2D Hole Gas (2DHG)
16%
Fabrication Sequence
16%
Field Drift
16%
Strain Relaxation
16%
GeSn Alloy
16%
Low Power VLSI
16%
Transconductance
16%
Gate Length
16%
High Ge Content
16%
High-field Transport
16%
Engineering
Quantum Well
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Mole Fraction
25%
Drift Velocity
25%
Two Dimensional
12%
Nanometre
12%
Electron Optical Lithography
12%
Heterostructures
12%
Optical Phonon
12%
Current Drive
12%
Fabrication Sequence
12%
Gate Length
12%
Strain Relaxation
12%
Material Science
Quantum Well
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Transistor
12%
Lithography
12%
Heterojunction
12%
Molecular Beam Epitaxy
12%
Si-Ge Alloys
12%