The separation of the generation components in an MOS capacitor made with photo-induced CVD oxide deposited at 80°C

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Access to Document

@article{b09532c7344145198f34c6d96cd0fce1,

title = "The separation of the generation components in an MOS capacitor made with photo-induced CVD oxide deposited at 80°C",

author = "Yosi Shacham-Diamand",

year = "1988",

month = dec,

doi = "10.1016/0038-1101(88)90072-X",

language = "אנגלית",

volume = "31",

pages = "1743--1745",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "12",

}

TY - JOUR

T1 - The separation of the generation components in an MOS capacitor made with photo-induced CVD oxide deposited at 80°C

AU - Shacham-Diamand, Yosi

PY - 1988/12

Y1 - 1988/12

UR - http://www.scopus.com/inward/record.url?scp=45449124644&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(88)90072-X

DO - 10.1016/0038-1101(88)90072-X

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:45449124644

SN - 0038-1101

VL - 31

SP - 1743

EP - 1745

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -