The separation of the generation components in an MOS capacitor made with photo-induced CVD oxide deposited at 80°C

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)1743-1745
Number of pages3
JournalSolid-State Electronics
Volume31
Issue number12
DOIs
StatePublished - Dec 1988
Externally publishedYes

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