The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor

A. Tsukernik, M. Karpovski, A. Palevski*, V. J. Goldman, S. Luryi, A. Rudra, E. Kapon

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report quantum magnetotransport experiments in novel 3 μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ≫h/e2 when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
StatePublished - Jan 2002
Event14th International Conference on the - Prague, Czech Republic
Duration: 30 Jul 20013 Aug 2001

Keywords

  • 2DEG
  • Quantum hall effect
  • V-grooved heterojunction

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