The role of spin polarization on the quantum Hall effect in 2DEG with periodically modulated filling factor

A. Tsukernik, M. Karpovski, A. Palevski, V. J. Goldman, S. Luryi, A. Rudra, E. Kapon

Research output: Contribution to journalConference articlepeer-review

Abstract

We report quantum magnetotransport experiments in novel 3 μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ≫h/e2 when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
StatePublished - Jan 2002
Event14th International Conference on the - Prague, Czech Republic
Duration: 30 Jul 20013 Aug 2001

Keywords

  • 2DEG
  • Quantum hall effect
  • V-grooved heterojunction

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