We report quantum magnetotransport experiments in novel 3 μm-period V-grooved GaAs/AlGaAs heterojunctions. In such structures a periodic spatial variation of the normal component of magnetic field is realized. We observe anomalous features in both weak and strong magnetic fields. The quantum Hall effect step-like Hall resistance is replaced by an oscillatory variation when the current is applied parallel to the grooves. The longitudinal resistance peaks attain unusually high values ≫h/e2 when the current is applied perpendicular to the grooves. Most of the features can be explained by a model of serial and parallel connection of stripes with different filling factors and different spin polarization at the adjacent stripes.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|State||Published - Jan 2002|
|Event||14th International Conference on the - Prague, Czech Republic|
Duration: 30 Jul 2001 → 3 Aug 2001
- Quantum hall effect
- V-grooved heterojunction