The quantum geometric origin of capacitance in insulators

Ilia Komissarov, Tobias Holder, Raquel Queiroz*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In band insulators, without a Fermi surface, adiabatic transport can exist due to the geometry of the ground state wavefunction. Here we show that for systems driven at a small but finite frequency ω, transport likewise depends sensitively on quantum geometry. We make this statement precise by expressing the Kubo formula for conductivity as the variation of the time-dependent polarization with respect to the applied field. We find that at linear order in frequency, the longitudinal conductivity results from an intrinsic capacitance determined by the ratio of the quantum metric and the spectral gap, establishing a fundamental link between the dielectric response and the quantum metric of insulators. We demonstrate that quantum geometry is responsible for the electronic contribution to the dielectric constant in a wide range of insulators, including the free electron gas in a quantizing magnetic field, for which we show the capacitance is quantized. We also study gapped bands of hBN-aligned twisted bilayer graphene and obstructed atomic insulators such as diamond. In the latter, we find its abnormally large refractive index to have a topological origin.

Original languageEnglish
Article number4621
JournalNature Communications
Volume15
Issue number1
DOIs
StatePublished - Dec 2024

Funding

FundersFunder number
Materials Research Science and Engineering Center, Harvard UniversityDMR-2011738
Materials Research Science and Engineering Center, Harvard University
European Research Council101077020
European Research Council

    Fingerprint

    Dive into the research topics of 'The quantum geometric origin of capacitance in insulators'. Together they form a unique fingerprint.

    Cite this