The partial contribution of the sub-bands to λ f V3Si

O. Entin-Wohlman*, M. Weger

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The band structure and the electron-phonon coupling constant are calculated for pi bands using a tight-binding parameter fit for V3Si. Following this and previous calculations for the delta 2 band and the sigma band hybridised with the delta 1 band, an approximate relationship for the contribution to lambda from the various sub-bands of the 3 d band is developed. The relationship depends upon the individual width of the sub-band and its contribution to the density of states and shows that there is some compensation between N(0) (the electronic density of states at the Fermi level) and I2 (the electron-phonon coupling constant). A narrow band gives rise to a large value of N(0) but a small value of I2; thus the product N(0)I2 does not follow the behaviour of N(0).

Original languageEnglish
Article number011
Pages (from-to)663-672
Number of pages10
JournalJournal of Physics F: Metal Physics
Volume14
Issue number3
DOIs
StatePublished - 1984
Externally publishedYes

Fingerprint

Dive into the research topics of 'The partial contribution of the sub-bands to λ f V3Si'. Together they form a unique fingerprint.

Cite this