Abstract
Electronic transport properties have been measured on 3500 Å 'random' Al-Ge films. The room temperature resistivity exhibits a sharp discontinuous jump at the metal-insulator transition at the critical metallic fraction, φc = 8.8 vol% Al. A new procedure is described for extracting values for the zero temperature conductivity σ(0) from the metallic low temperature conductivity data. When σ(0) is extrapolated to zero as a function of Al content, the value obtained for the critical aluminum fraction σc is in good agreement with the room temperature value.
Original language | English |
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Pages (from-to) | 2427-2428 |
Number of pages | 2 |
Journal | Czechoslovak Journal of Physics |
Volume | 46 |
Issue number | SUPPL. 5 |
DOIs | |
State | Published - 1996 |