The metal-insulator transition in 'random'Al-Ge films

Ralph Rosenbaum*, Vardit Goldner, Joseph Shoshany, David S. McLachlan, Mike Witcomb

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Electronic transport properties have been measured on 3500 Å 'random' Al-Ge films. The room temperature resistivity exhibits a sharp discontinuous jump at the metal-insulator transition at the critical metallic fraction, φc = 8.8 vol% Al. A new procedure is described for extracting values for the zero temperature conductivity σ(0) from the metallic low temperature conductivity data. When σ(0) is extrapolated to zero as a function of Al content, the value obtained for the critical aluminum fraction σc is in good agreement with the room temperature value.

Original languageEnglish
Pages (from-to)2427-2428
Number of pages2
JournalCzechoslovak Journal of Physics
Volume46
Issue numberSUPPL. 5
DOIs
StatePublished - 1996

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