The influence of previous substrate heat treatment on the epitaxial growth of silver on mica

M. Barkai; E. Grünbaum; G. Deutscher

doi:10.1016/0040-6090(82)90077-3

The influence of previous substrate heat treatment on the epitaxial growth of silver on mica

M. Barkai, E. Grünbaum, G. Deutscher

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of silver films prepared by evaporation in ultrahigh vacuum onto mica cleaved in air and previously heat treated at various temperatures T_H for 24 h was studied by reflection high energy electron diffraction. It was found that for T_H < 250 °C the silver films are well oriented from the initial stages of growth. At higher T_H the initial stages are characterized by crystallites with random orientation and with two main orientations (each with double positioning). With increasing thickness, first the randomly oriented crystallites disappear and then those with one of the main orientations; finally a single-crystal film is obtained (T_H < 320 °C. For films with a certain thickness it is found that, the higher T_H is, the higher is the fraction of randomly oriented crystallites. The results are explained by the decrease in water vapour concentration on the mica surface as T_H is increased, which in turn causes the reduction in the orientation of the initial nuclei as well as in their density.

Original language	English
Pages (from-to)	85-90
Number of pages	6
Journal	Thin Solid Films
Volume	90
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(82)90077-3
State	Published - 2 Apr 1982

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10.1016/0040-6090(82)90077-3

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abstract = "The growth of silver films prepared by evaporation in ultrahigh vacuum onto mica cleaved in air and previously heat treated at various temperatures TH for 24 h was studied by reflection high energy electron diffraction. It was found that for TH < 250 °C the silver films are well oriented from the initial stages of growth. At higher TH the initial stages are characterized by crystallites with random orientation and with two main orientations (each with double positioning). With increasing thickness, first the randomly oriented crystallites disappear and then those with one of the main orientations; finally a single-crystal film is obtained (TH < 320 °C. For films with a certain thickness it is found that, the higher TH is, the higher is the fraction of randomly oriented crystallites. The results are explained by the decrease in water vapour concentration on the mica surface as TH is increased, which in turn causes the reduction in the orientation of the initial nuclei as well as in their density.",

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AU - Deutscher, G.

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The influence of previous substrate heat treatment on the epitaxial growth of silver on mica

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