Abstract
The far field of PbSnTe injection lasers, perpendicular to the junction plane, was measured. The results are shown to be in good agreement with theoretical predictions. Design considerations are given for constructing laser structures having an improved far-field pattern.
Original language | English |
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Pages (from-to) | 1267-1270 |
Number of pages | 4 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 20 |
Issue number | 11 |
DOIs | |
State | Published - Nov 1984 |