The Far Field of PbSnTe Injection Lasers

Yosi Shani; Amos Hardy; Eli Kapon; Abraham Katzir

doi:10.1109/JQE.1984.1072306

The Far Field of PbSnTe Injection Lasers

Yosi Shani, Amos Hardy, Eli Kapon, Abraham Katzir

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The far field of PbSnTe injection lasers, perpendicular to the junction plane, was measured. The results are shown to be in good agreement with theoretical predictions. Design considerations are given for constructing laser structures having an improved far-field pattern.

Original language	English
Pages (from-to)	1267-1270
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	20
Issue number	11
DOIs	https://doi.org/10.1109/JQE.1984.1072306
State	Published - Nov 1984

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10.1109/JQE.1984.1072306

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@article{7f0f1bb694ca4005887f1c9b99110ed5,

title = "The Far Field of PbSnTe Injection Lasers",

abstract = "The far field of PbSnTe injection lasers, perpendicular to the junction plane, was measured. The results are shown to be in good agreement with theoretical predictions. Design considerations are given for constructing laser structures having an improved far-field pattern.",

author = "Yosi Shani and Amos Hardy and Eli Kapon and Abraham Katzir",

year = "1984",

month = nov,

doi = "10.1109/JQE.1984.1072306",

language = "אנגלית",

volume = "20",

pages = "1267--1270",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - The Far Field of PbSnTe Injection Lasers

AU - Shani, Yosi

AU - Hardy, Amos

AU - Kapon, Eli

AU - Katzir, Abraham

PY - 1984/11

Y1 - 1984/11

N2 - The far field of PbSnTe injection lasers, perpendicular to the junction plane, was measured. The results are shown to be in good agreement with theoretical predictions. Design considerations are given for constructing laser structures having an improved far-field pattern.

AB - The far field of PbSnTe injection lasers, perpendicular to the junction plane, was measured. The results are shown to be in good agreement with theoretical predictions. Design considerations are given for constructing laser structures having an improved far-field pattern.

UR - http://www.scopus.com/inward/record.url?scp=0021531738&partnerID=8YFLogxK

U2 - 10.1109/JQE.1984.1072306

DO - 10.1109/JQE.1984.1072306

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0021531738

SN - 0018-9197

VL - 20

SP - 1267

EP - 1270

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 11

ER -

The Far Field of PbSnTe Injection Lasers

Abstract

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