The epitaxial growth on CaF2 and BaF2 single-crystal films on a sapphire substrate

M. Barkai, E. Grünbaum, G. Deutscher

Research output: Contribution to journalArticlepeer-review

Abstract

Single-crsytal CaF2 and BaF2 films are being used as intermediate substrates for the epitaxial growth of single-crystal semiconductors (Ge and GaAs) films. p-jununctions in these films serve as solar cells. By dissolving the CaF2 or BaF2 in water the films are separated from the expensive substrate, which thus may be re-used. The epitaxial growth of CaF2 or BaF2 films by evaporation in uhv (MBC) onto a sapphire (110) wafer was studied. The growth conditions, the crystalline and surface quality and the epitaxial orientation relationships were determined by in situ reflection high energy electron diffraction (RHEED).

Original languageEnglish
Pages (from-to)847-850
Number of pages4
JournalVacuum
Volume41
Issue number4-6
DOIs
StatePublished - 1990

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