The epitaxial growth on CaF2 and BaF2 single-crystal films on a sapphire substrate

M. Barkai; E. Grünbaum; G. Deutscher

doi:10.1016/0042-207X(90)93800-X

The epitaxial growth on CaF₂ and BaF₂ single-crystal films on a sapphire substrate

M. Barkai^*, E. Grünbaum, G. Deutscher

^*Corresponding author for this work

School of Physics and Astronomy

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Single-crsytal CaF₂ and BaF₂ films are being used as intermediate substrates for the epitaxial growth of single-crystal semiconductors (Ge and GaAs) films. p-jununctions in these films serve as solar cells. By dissolving the CaF₂ or BaF₂ in water the films are separated from the expensive substrate, which thus may be re-used. The epitaxial growth of CaF₂ or BaF₂ films by evaporation in uhv (MBC) onto a sapphire (110) wafer was studied. The growth conditions, the crystalline and surface quality and the epitaxial orientation relationships were determined by in situ reflection high energy electron diffraction (RHEED).

Original language	English
Pages (from-to)	847-850
Number of pages	4
Journal	Vacuum
Volume	41
Issue number	4-6
DOIs	https://doi.org/10.1016/0042-207X(90)93800-X
State	Published - 1990

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@article{6edd22216aba426f8506739ec713e847,

title = "The epitaxial growth on CaF2 and BaF2 single-crystal films on a sapphire substrate",

abstract = "Single-crsytal CaF2 and BaF2 films are being used as intermediate substrates for the epitaxial growth of single-crystal semiconductors (Ge and GaAs) films. p-jununctions in these films serve as solar cells. By dissolving the CaF2 or BaF2 in water the films are separated from the expensive substrate, which thus may be re-used. The epitaxial growth of CaF2 or BaF2 films by evaporation in uhv (MBC) onto a sapphire (110) wafer was studied. The growth conditions, the crystalline and surface quality and the epitaxial orientation relationships were determined by in situ reflection high energy electron diffraction (RHEED).",

author = "M. Barkai and E. Gr{\"u}nbaum and G. Deutscher",

note = "Funding Information: This work was supported by a research contract from Southern California Edison and one of us (M Barkai) acknowledges gratefullly the Fellowship granted by the Pikowski-Valazzi Foundation.",

year = "1990",

doi = "10.1016/0042-207X(90)93800-X",

language = "אנגלית",

volume = "41",

pages = "847--850",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd.",

number = "4-6",

}

TY - JOUR

T1 - The epitaxial growth on CaF2 and BaF2 single-crystal films on a sapphire substrate

AU - Barkai, M.

AU - Grünbaum, E.

AU - Deutscher, G.

N1 - Funding Information: This work was supported by a research contract from Southern California Edison and one of us (M Barkai) acknowledges gratefullly the Fellowship granted by the Pikowski-Valazzi Foundation.

PY - 1990

Y1 - 1990

N2 - Single-crsytal CaF2 and BaF2 films are being used as intermediate substrates for the epitaxial growth of single-crystal semiconductors (Ge and GaAs) films. p-jununctions in these films serve as solar cells. By dissolving the CaF2 or BaF2 in water the films are separated from the expensive substrate, which thus may be re-used. The epitaxial growth of CaF2 or BaF2 films by evaporation in uhv (MBC) onto a sapphire (110) wafer was studied. The growth conditions, the crystalline and surface quality and the epitaxial orientation relationships were determined by in situ reflection high energy electron diffraction (RHEED).

AB - Single-crsytal CaF2 and BaF2 films are being used as intermediate substrates for the epitaxial growth of single-crystal semiconductors (Ge and GaAs) films. p-jununctions in these films serve as solar cells. By dissolving the CaF2 or BaF2 in water the films are separated from the expensive substrate, which thus may be re-used. The epitaxial growth of CaF2 or BaF2 films by evaporation in uhv (MBC) onto a sapphire (110) wafer was studied. The growth conditions, the crystalline and surface quality and the epitaxial orientation relationships were determined by in situ reflection high energy electron diffraction (RHEED).

UR - http://www.scopus.com/inward/record.url?scp=0025530434&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(90)93800-X

DO - 10.1016/0042-207X(90)93800-X

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0025530434

SN - 0042-207X

VL - 41

SP - 847

EP - 850

JO - Vacuum

JF - Vacuum

IS - 4-6

ER -

The epitaxial growth on CaF₂ and BaF₂ single-crystal films on a sapphire substrate

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