The epitaxial growth of germanium and silicon on an Ag(111) film on a mica substrate

M. Barkai, E. Grünbaum, Y. Lereah, G. Deutscher

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With the aim of finding a method of obtaining self-supporting single-crystal films of silicon for solar cells we studied the epitaxial growth of silicon and germanium prepared by evaporation in ultrahigh vacuum onto an Ag(111) film evaporated in situ onto a mica substrate cleaved in air. The films were examined mainly by reflection high energy electron diffraction. Silicon and germanium films 50-200 Å thick were composed of crystallites with two main orientations relative to the substrate and unoriented crystallites in varying proportions depending on the substrate temperature Ts and the previous heat treatment temperature TH of the mica. Nearly single-crystal films of silicon could be obtained for Ts = 350 °C and TH = 250 °C. The sticking coefficient for silicon on silver was found to decrease almost to zero for Ts = 420 °C with TH = 250 °C. No single-crystal films of germanium were obtained.

Original languageEnglish
Pages (from-to)91-97
Number of pages7
JournalThin Solid Films
Issue number1
StatePublished - 2 Apr 1982


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