The effects of carrier transport on the photoluminescence of degenerate electron-hole plasma in GaAs epilayers

E. Poles; S. Y. Goldberg; B. Fainberg; D. Huppert; M. C. Hanna; Y. Rosenwaks

doi:10.1016/S0169-4332(96)00413-8

The effects of carrier transport on the photoluminescence of degenerate electron-hole plasma in GaAs epilayers

E. Poles, S. Y. Goldberg, B. Fainberg, D. Huppert^*, M. C. Hanna, Y. Rosenwaks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface. We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.

Original language	English
Pages (from-to)	457-465
Number of pages	9
Journal	Applied Surface Science
Volume	106
DOIs	https://doi.org/10.1016/S0169-4332(96)00413-8
State	Published - Oct 1996

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title = "The effects of carrier transport on the photoluminescence of degenerate electron-hole plasma in GaAs epilayers",

abstract = "Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface. We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.",

author = "E. Poles and Goldberg, {S. Y.} and B. Fainberg and D. Huppert and Hanna, {M. C.} and Y. Rosenwaks",

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doi = "10.1016/S0169-4332(96)00413-8",

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AU - Poles, E.

AU - Goldberg, S. Y.

AU - Fainberg, B.

AU - Huppert, D.

AU - Hanna, M. C.

AU - Rosenwaks, Y.

PY - 1996/10

Y1 - 1996/10

N2 - Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface. We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.

AB - Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface. We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.

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VL - 106

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JO - Applied Surface Science

JF - Applied Surface Science

ER -

The effects of carrier transport on the photoluminescence of degenerate electron-hole plasma in GaAs epilayers

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