The effects of carrier transport on the photoluminescence of degenerate electron-hole plasma in GaAs epilayers

E. Poles, S. Y. Goldberg, B. Fainberg, D. Huppert, M. C. Hanna, Y. Rosenwaks

Research output: Contribution to journalArticlepeer-review

Abstract

Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface. We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.

Original languageEnglish
Pages (from-to)457-465
Number of pages9
JournalApplied Surface Science
Volume106
DOIs
StatePublished - Oct 1996

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