TY - JOUR
T1 - The effect of nonideal polar monolayers on molecular gated transistors
AU - Shaya, O.
AU - Amit, I.
AU - Rosenwaks, Y.
PY - 2010/8/25
Y1 - 2010/8/25
N2 - Nonideal polar monolayers can induce a field-effect in molecular gated transistors. To quantify the magnitude of this phenomenon, we have calculated the effect of roughness and noncontinuity of such layers on the operation of hybrid silicon-on-insulator field-effect transistors. The results show that under most practical conditions, the nonideality of polar monolayers induces very small electric fields in the underlying transistor channel, and consequently a negligible gating effect.
AB - Nonideal polar monolayers can induce a field-effect in molecular gated transistors. To quantify the magnitude of this phenomenon, we have calculated the effect of roughness and noncontinuity of such layers on the operation of hybrid silicon-on-insulator field-effect transistors. The results show that under most practical conditions, the nonideality of polar monolayers induces very small electric fields in the underlying transistor channel, and consequently a negligible gating effect.
KW - field-effect transistors
KW - molecular-gated transistors
KW - nonideal polar monolayers
KW - self-assembled monolayers
KW - semiconductor interfaces
UR - http://www.scopus.com/inward/record.url?scp=77957656787&partnerID=8YFLogxK
U2 - 10.1021/am1003415
DO - 10.1021/am1003415
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AN - SCOPUS:77957656787
SN - 1944-8244
VL - 2
SP - 2289
EP - 2292
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 8
ER -