The effect of nonideal polar monolayers on molecular gated transistors

O. Shaya, I. Amit, Y. Rosenwaks*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Nonideal polar monolayers can induce a field-effect in molecular gated transistors. To quantify the magnitude of this phenomenon, we have calculated the effect of roughness and noncontinuity of such layers on the operation of hybrid silicon-on-insulator field-effect transistors. The results show that under most practical conditions, the nonideality of polar monolayers induces very small electric fields in the underlying transistor channel, and consequently a negligible gating effect.

Original languageEnglish
Pages (from-to)2289-2292
Number of pages4
JournalACS Applied Materials and Interfaces
Issue number8
StatePublished - 25 Aug 2010


  • field-effect transistors
  • molecular-gated transistors
  • nonideal polar monolayers
  • self-assembled monolayers
  • semiconductor interfaces


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