The effect of hydrogen on boron diffusion in SiO2

Yosi Shacham-Diamand*, William G. Oldham

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The diffusivity of boron in silicon dioxide may be increased by the introduction of hydrogen into the annealing atmosphere. In this paper we report on the diffusion characteristics of boron ion-implanted into thermally grown SiO2. A sensitive technique was used in which the boron atoms redistributed into the substrate are characterized by electrical methods. The diffusivity of boron in thermal SiO2 was measured over the temperature range of 950-1150°C with hydrogen partial pressure from 0 to 0.2 atm. It was found that the diffusion coefficient of boron in oxide at 1150° C increases as the square root of the hydrogen partial pressure. At fixed pressure the temperature dependence of the diffusion coefficient obeys a single-activation-energy exponential rule. At 0.1 atm partial pressure of H2 the activation energy is 3.0 eV and the preexponential factor is 6 x 105 [cm2/sec.].

Original languageEnglish
Pages (from-to)229-233
Number of pages5
JournalJournal of Electronic Materials
Volume15
Issue number4
DOIs
StatePublished - Jul 1986
Externally publishedYes

Keywords

  • SiO
  • boron diffusivity
  • diffusion

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