Abstract
We present a rigorous analysis of the effects of electric fields on time-resolved photoluminescence in semiconductors. The results show that the effect of the field alone on the photoluminescence decay can be distinguished from that of field-enhanced surface recombination if the carrier injection levels, the surface recombination velocity at zero field, and the band bending in the dark are within certain limits. When these experimental conditions are met it is possible to extract the recombination and/or transfer velocity of free carriers in the presence of electric fields.
| Original language | English |
|---|---|
| Pages (from-to) | 4255-4257 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 75 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1994 |
| Externally published | Yes |