The applicability of implanted α-sources to thickness and stoichiometry measurements of thin films

I. Kelson*, Y. Levy, D. Racah, E. Redmard, M. Beaudoin, T. Pinnington, T. Tiedje, U. Giesen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A method for determining both the thickness and the average stoichiometry of thin films is presented. The method is based on implanting radioactive α-sources in the substrate prior to layer growth and measuring the energy loss of the α-particles as they traverse the layer. Information about the stoichiometry is obtained through the comparison of the energy loss of α-particles of different initial energies. Experimental examples for the utilization of this method are presented, in which Sb was grown on Si substrates, GaAs, InAs and AlAs on GaAs and YBCO on YSZ. The experimental precision which can be expected using the method is discussed, together with specific scenarios in which it could be advantageously applied.

Original languageEnglish
Pages (from-to)131-136
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume30
Issue number1
DOIs
StatePublished - 7 Jan 1997

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