Temperature dependent Hall coefficient in two-dimensional heavily doped p-type germanium

Leandro R. Tessler, Guy Deutscher

Research output: Contribution to journalArticlepeer-review


We performed accurate measurements of the Hall coefficient at low temperatures of two-dimensional polycrystalline thin films of heavily doped p-type germanium. We found a logarithmic dependence on the temperature, that can be associated with interaction effects in the particle-hole channel. Comparison with the variation of the resistance per square indicated that interaction is more important than localisation for the determination of the electronic properties of this material. The screening factor F was found to be 0.55±0.15, taking into account the strong spin-orbit coupling in p-type germanium. This value is lower than the one predicted by the free electron gas model.

Original languageEnglish
Pages (from-to)219-221
Number of pages3
JournalSolid State Communications
Issue number4
StatePublished - Apr 1990


Dive into the research topics of 'Temperature dependent Hall coefficient in two-dimensional heavily doped p-type germanium'. Together they form a unique fingerprint.

Cite this