Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3

Sushrut Modak, Leonid Chernyak*, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.

Original languageEnglish
Article number125014
JournalAIP Advances
Volume11
Issue number12
DOIs
StatePublished - 1 Dec 2021

Funding

FundersFunder number
NSF DMR1856662
US–Israel BSF2018010
National Science Foundation2127916, 1802208
U.S. Department of DefenseHDTRA1-20-2-0002
Defense Threat Reduction Agency
North Atlantic Treaty OrganizationG5748
University of Central Florida
Tel Aviv University

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