Temperature dependence of buried channel ion sensitive field effect transistors

Roman Novitski, Hila Einati*, Yosi Shacham-Diamand

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper we describe the temperature dependence of buried channel (BC) ion sensitive field effect transistor (ISFET). The device response depends on the temperature; hence, temperature variations can cause erroneous readings. A theoretical model describing the temperature dependence of BC-ISFET and a theoretical solution to eliminate the signal variations due to temperature changes are presented here. The suggested solution is based on an inverter containing n -BC-ISFET and p -BC-ISFET. The influence of various parameters on the operation of the inverter and its sensitivity are investigated. We discuss the influence of self-assembled monolayers on the operation of the inverter.

Original languageEnglish
Article number094501
JournalJournal of Applied Physics
Volume106
Issue number9
DOIs
StatePublished - 2009

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