Temperature dependence of buried channel ion sensitive field effect transistors

In this paper we describe the temperature dependence of buried channel (BC) ion sensitive field effect transistor (ISFET). The device response depends on the temperature; hence, temperature variations can cause erroneous readings. A theoretical model describing the temperature dependence of BC-ISFET and a theoretical solution to eliminate the signal variations due to temperature changes are presented here. The suggested solution is based on an inverter containing n -BC-ISFET and p -BC-ISFET. The influence of various parameters on the operation of the inverter and its sensitivity are investigated. We discuss the influence of self-assembled monolayers on the operation of the inverter.