Surface photovoltage spectroscopy of metamorphic high electron mobility transistor structures

S. Solodky, T. Baksht, A. Khramtsov, M. Leibovitch, S. Hava, Yoram Shapira

Research output: Contribution to journalArticlepeer-review

Abstract

The epitaxial structures of InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) were analyzed using surface photovoltage spectroscopy (SPS). The direct current (dc) measurements performed on the complete devices showed correlations between epistructure parameters and final device performance. The SPS was also used for technology evaluation from the wafer incoming inspection stage to the final device. The devices with increased positive surface charge density leads to increased Idss and absolute value of VT.

Original languageEnglish
Pages (from-to)2434-2438
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number5
DOIs
StatePublished - Sep 2004

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