The epitaxial structures of InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) were analyzed using surface photovoltage spectroscopy (SPS). The direct current (dc) measurements performed on the complete devices showed correlations between epistructure parameters and final device performance. The SPS was also used for technology evaluation from the wafer incoming inspection stage to the final device. The devices with increased positive surface charge density leads to increased Idss and absolute value of VT.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - Sep 2004